Effects of defect states on the performance of CuInGaSe2 solar cells

Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the band gap and densities） in absorption layer CIGS and in buffer layer CdS were examined. T...

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Published in:半导体学报：英文版 2014-02 (2), p.76-81
Main Author: 万福成 汤富领 薛红涛 路文江 冯煜东 芮执元
Format: Article
Language:English
Subjects:
CIGS
光电转换效率
器件建模
开路电压
性能参数
短路电流
缺陷态
薄膜太阳能电池
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description Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CulnGaSe2 （CIGS） thin film solar cells theoretically. The varieties of defect states （location in the band gap and densities） in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters： open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 10 14 cm-3 in CIGS or less than 10 18 cm-3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption.
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subjects CIGS
光电转换效率
器件建模
开路电压
性能参数
短路电流
缺陷态
薄膜太阳能电池
title Effects of defect states on the performance of CuInGaSe2 solar cells
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