A GaN-AIGaN-InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED

The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs...

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Bibliographic Details
Published in:中国物理B：英文版 2014 (4), p.704-707
Main Author: 杨斌 郭志友 解楠 张盼君 李婧 李方正 林宏 郑欢 蔡金鑫
Format: Article
Language:English
Subjects:
InGaN
光输出功率
多量子阱
数值模拟
氮化铟镓
蓝光LED
蓝色发光二极管
量子势垒
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Summary:The advantages of a GaN-AlGaN-InGaN last quantum barrier （LQB） in an InGaN-based blue light-emitting diode are analyzed via numerical simulation. We found an improved light output power, lower current leakage, higher recombi- nation rate, and less efficiency droop compared with conventional GaN LQBs. These improvements in the electrical and optical characteristics are attributed mainly to the specially designed GaN-AlGaN-InGaN LQB, which enhances electron confinement and improves hole injection efficiency.
ISSN:1674-1056
2058-3834