Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics

Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated b...

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Published in:半导体学报：英文版 2014 (3), p.16-19
Main Author: 陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋
Format: Article
Language:English
Subjects:
PLZST
二氧化锆
反铁电陶瓷
固相反应法
温度
相变行为
钛
铁电陶瓷材料
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Summary:Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.
ISSN:1674-4926