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Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics
Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated b...
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| Published in: | 半导体学报：英文版 2014 (3), p.16-19 |
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| container_title | 半导体学报：英文版 |
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| creator | 陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋 |
| description | Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems. |
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Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.</description><identifier>ISSN: 1674-4926</identifier><language>eng</language><subject>PLZST ; 二氧化锆 ; 反铁电陶瓷 ; 固相反应法 ; 温度 ; 相变行为 ; 钛 ; 铁电陶瓷材料</subject><ispartof>半导体学报：英文版, 2014 (3), p.16-19</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋</creatorcontrib><title>Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics</title><title>半导体学报：英文版</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.</description><subject>PLZST</subject><subject>二氧化锆</subject><subject>反铁电陶瓷</subject><subject>固相反应法</subject><subject>温度</subject><subject>相变行为</subject><subject>钛</subject><subject>铁电陶瓷材料</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0NDM30TWxNDLjYOAqLs4yMADyTQw5GWpd09JSk0sU8tMUSlJzC1KLEktKi1IV8vMUCjISi1MVSooS84ozSzKBAkmpGYllmflFILWJeSWZaalFRfmpOUDdRZnJCgFJBu_3zLI090kE0QZG7_d0RBWBmOamwXkg2si0QiEkU6FC399YIRloT25mcjEPA2taYk5xKi-U5mZQdHMNcfbQTc7Iz0svzMxLjy8oysxNLKqMN7E0NDYxNzY3JkYNAE5gUaE</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2014</creationdate><title>Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics</title><author>陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_491347373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>PLZST</topic><topic>二氧化锆</topic><topic>反铁电陶瓷</topic><topic>固相反应法</topic><topic>温度</topic><topic>相变行为</topic><topic>钛</topic><topic>铁电陶瓷材料</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>半导体学报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>陈婷婷 刘冰 丑修建 刘俊 薛晨阳 张文栋</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics</atitle><jtitle>半导体学报：英文版</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2014</date><risdate>2014</risdate><issue>3</issue><spage>16</spage><epage>19</epage><pages>16-19</pages><issn>1674-4926</issn><abstract>Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3（x D0.10, 0.105, 0.11）（PLZST） antiferroelectric ceramics with highly preferred-（110） orientation were successfully fabricated via the conventional solid-state reaction method.The antiferroelectric nature of PLZST ceramics induced by electric field was demonstrated by the dielectric constant-temperature（D-T） and the polarization-electric field（P-E） measurement. Typical phase transition from ferroelectric（FE） to antiferroelectric（AFE）, and then to paraelectric（PE） is obtained. The results indicate that the phase transition behavior is suppressed with increasing of x, and T c is remarkably shifted to higher temperature of168 ℃, 170 ℃ and 174 ℃, respectively. Besides, high phase transition current（110 6A, 810 7A and 610 7A, respectively） is obtained with temperature induced. Consequently, the excellent electric properties and the restraint between temperature and electric field would provide basis on the application of PLZST antiferroelectric ceramics in microelectronic integrated systems and sophisticated weapons systems.</abstract></addata></record> |
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| identifier | ISSN: 1674-4926 |
| ispartof | 半导体学报：英文版, 2014 (3), p.16-19 |
| issn | 1674-4926 |
| language | eng |
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| source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| subjects | PLZST 二氧化锆 反铁电陶瓷 固相反应法 温度 相变行为 钛 铁电陶瓷材料 |
| title | Effect of temperature on phase transition behavior of antiferroelectric Pb0：97La0：02（Zr0：75Sn0：25x Ti x/O3 ceramics |
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