Performance enhancement of pentacene-based organic field-effect transistor by inserting a WO3 buffer layer

The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer lead...

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Bibliographic Details
Published in:半导体学报：英文版 2014-06 (6), p.38-41
Main Author: 樊建锋 程晓曼 白潇 郑灵程 蒋晶 吴峰
Format: Article
Language:English
Subjects:
三氧化钨
器件性能
场效应迁移率
性能增强
有机场效应晶体管
缓冲层
苯系
过渡金属氧化物
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Summary:The pentacene-based organic field effect transistor （OFET） with a thin transition metal oxide （WO3） layer between pentacene and metal （AI） source/drain electrodes was fabricated. Compared with conventional OFET with only metal AI source/drain electrodes, the introduction of the WO3 buffer layer leads to the device performance enhancement. The effective field-effect mobility and threshold voltage are improved to 1.90 em2/（V.s） and 13 V, respectively. The performance improvements are attributed to the decrease of the interface energy barrier and the contact resistance. The results indicate that it is an effective approach to improve the OFET performance by using a WO3 buffer layer.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064004