Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors

Abstract： Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet （UV） photodetectors （PDs） are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition （MOCVD）. The two p-i-n junctions contained in the...

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Bibliographic Details
Published in:半导体学报：英文版 2014 (6), p.58-61
Main Author: 杨敏 种明 赵德刚 王晓勇 苏艳梅 孙捷 孙秀艳
Format: Article
Language:English
Subjects:
双频
异质结构
日盲
电流密度
紫外探测器
金属有机化学气相沉积
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Summary:Abstract： Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet （UV） photodetectors （PDs） are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition （MOCVD）. The two p-i-n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of ～10.8 mA/W at 242 nm and ～5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 μm and 800 μm, exhibit almost the same leakage current of ～1.3× 10-9 A at a reverse bias of 10 V. Therefore, dark current densities of the two junctions are close to 6.6 × 10-7 A/cm2 and 2.6 × 10-7 A/cm2 at -10 V respectively.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/064008