Efficient Phosphorescent Organic Light Emitting Diodes Using FITCNQ as the Indium-Tin-Oxide Modification Layer

A phosphorescent organic light emitting diode by using tetrafluorotetracyanoquinodimethane （F4 TCNQ） as the indium-tin-oxide modification layer and 4,4＇-bis（earbazol-9-yl）biphenyl （CBP） as the hole transporting layer is reported. CBP doped with a green phosphorescent dopant, tris（2-（p-tolyl）pyridine...

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Bibliographic Details
Published in:中国物理快报：英文版 2014 (9), p.151-154
Main Author: 焦博 朱晓博 吴朝新 于跃 侯洵
Format: Article
Language:English
Subjects:
CBP
TCNQ
改性层
有机发光二极管
磷光
空穴传输层
空穴输送层
铟锡氧化物
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Summary:A phosphorescent organic light emitting diode by using tetrafluorotetracyanoquinodimethane （F4 TCNQ） as the indium-tin-oxide modification layer and 4,4＇-bis（earbazol-9-yl）biphenyl （CBP） as the hole transporting layer is reported. CBP doped with a green phosphorescent dopant, tris（2-（p-tolyl）pyridine） iridium（III） （Ir（mppy）3） is used as the emission layer in this device, and the maximum current efficiency of 31.3 cd/A is achieved. Further- more, low efficiency roll-off of 10.4% is observed with device luminance increasing from 100 cd/m2 （29. 7 cd/A） to lO000 cd/m2 （26.5 cd/A）. It is demonstrated that a charge-generation area is formed at F4 TCNQ/CBP interface, which will benefit hole injection into the hole transporting layer. Moreover, use of the CBP hole transporting layer will benefit the low efficiency roll-off by broadening triplet exciton formation, as well as by avoiding accumulation of unbalanced carrier at the hole transporting layer/emission layer interface.
ISSN:0256-307X
1741-3540