Semimetal NaaBi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditio...

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Published in:中国物理快报：英文版 2014 (11), p.130-132
Main Author: 文竞 郭画 颜晨晖 王振宇 常凯 邓鹏 张腾 张志东 季帅华 王立莉 何珂 马旭村 陈曦 薛其坤
Format: Article
Language:English
Subjects:
6H碳化硅
分子束外延生长
半金属
扫描隧道显微镜
石墨
组合技术
薄膜
角分辨光电子能谱
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Summary:Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for NaaBi thin films on double-layer graphene are successfully established. The band structure of NaaBi grown on graphene is mapped along Г-M and Г-K; directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface.
ISSN:0256-307X
1741-3540