Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-car...

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Published in:中国物理B：英文版 2015-02 (2), p.191-197
Main Author: 张东亮 成步文 薛春来 张旭 丛慧 刘智 张广泽 王启明
Format: Article
Language:English
Subjects:
光学增益
合金
增益特性
激光理论
短波红外
自由载流子吸收
载流子浓度
阈值电流密度
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Summary:Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/24/2/024211