Fabrication and Characterization of Fe-Doped In2O3 Dilute Magnetic Semiconducting Nanowires

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray photoelectron spectroscopy （XPS） and Raman spectroscopy that Fe has been successfully...

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Published in:中国物理快报：英文版 2015-03 (3), p.133-136
Main Author: 张军然 吴振尧 刘玉杰 吕占朋 钮伟 王学锋 杜军 刘文卿 张荣 徐永兵
Format: Article
Language:English
Subjects:
X射线光电子能谱
制造
化学气相沉积技术
半导体纳米线
氧化铟
表征
铁掺杂
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Summary:Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray photoelectron spectroscopy （XPS） and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2＋ and Fe3＋, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/3/037501