Effect of pressure on the semipolar GaN （10-11） growth mode on patterned Si substrates

In this paper, we investigate the effect of pressure on the growth mode of high quality （10-11） GaN using an epi- taxial lateral over growth （ELO） technique by metal organic chemical vapor deposition （MOCVD）. Two pressure growth conditions, high pressure （HP） 1013 mbar and low pressure growth （LP） 5...

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Bibliographic Details
Published in:中国物理B：英文版 2015 (5), p.572-576
Main Author: 刘建明 张洁 林文禹 叶孟欣 冯向旭 张东炎 徐宸科 刘宝林
Format: Article
Language:English
Subjects:
Si衬底
半极性
压力
图案
氮化镓
生长条件
生长模式
金属有机化学气相沉积
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Summary:In this paper, we investigate the effect of pressure on the growth mode of high quality （10-11） GaN using an epi- taxial lateral over growth （ELO） technique by metal organic chemical vapor deposition （MOCVD）. Two pressure growth conditions, high pressure （HP） 1013 mbar and low pressure growth （LP） 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature （77 K） photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.
ISSN:1674-1056
2058-3834