Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

It was demonstrated that heavy ions can induce large current-voltage （I-V） characteristics shift in commercial trench power MOSFETs, named single event microdose effect （SE-microdose effect）. A model is pre- sented to describe this effect. This model calculates the charge deposition by a single heav...

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Bibliographic Details
Published in:Journal of semiconductors 2015-05, Vol.36 (5), p.31-36
Main Author: 万欣 周伟松 刘道广 薄涵亮 许军
Format: Article
Language:English
Subjects:
Charge deposition
charge deposition model
Computer simulation
Electric power generation
Mathematical models
MOSFETs
SE-microdose effect
Semiconductors
SiO2
trench power MOSFETs
Trenches
Volt-ampere characteristics
充电
剂量效应
功率MOSFET
沉积模式
沟槽
电荷沉积
计算结果
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Summary:It was demonstrated that heavy ions can induce large current-voltage （I-V） characteristics shift in commercial trench power MOSFETs, named single event microdose effect （SE-microdose effect）. A model is pre- sented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET＇s I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment＇s data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/5/054003