Graded doping low internal loss 1060-nm InGaAs/AIGaAs quantum well semiconductor lasers

Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss...

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Bibliographic Details
Published in:中国物理B：英文版 2015 (6), p.374-377
Main Author: 谭少阳 翟腾 张瑞康 陆丹 王圩 吉晨
Format: Article
Language:English
Subjects:
InGaAs
内部参数
损失
掺杂
波导激光器
纳米
量子阱半导体激光器
阈值电流
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Summary:Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
ISSN:1674-1056
2058-3834