Analysis of charge density and Fermi level of AllnSb/InSb single-gate high electron mobility transistor

A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge...

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Bibliographic Details
Published in:半导体学报：英文版 2015 (6), p.47-52
Main Author: S. Theodore Chandra N. B. Balamurugan M. Bhuvaneswari N. Anbuselvan N. Mohankumar
Format: Article
Language:English
Subjects:
HEMT器件
InSb
栅极电压
模型生成
电荷密度
能级分析
费米能级
高电子迁移率晶体管
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Summary:A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.
ISSN:1674-4926