Design and implementation of 83-nm low noise InP-based InAIAs/InGaAs PHEMTs

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transcond...

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Published in:半导体学报：英文版 2015 (8), p.83-87
Main Author: 王志明 赵卓彬 胡志富 黄辉 崔玉兴 孙希国 默江辉 李亮 付兴昌 吕昕
Format: Article
Language:English
Subjects:
GHz
InGaAs
InP基
PHEMT
低噪声
参数测量
设计
赝配高电子迁移率晶体管
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Summary:83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.
ISSN:1674-4926