Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application

Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization tem...

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Published in:中国物理快报：英文版 2015-07 (7), p.168-170
Main Author: 朱月琴 张中华 宋三年 谢华清 宋志棠 沈兰兰 李乐 吴良才 刘波
Format: Article
Language:English
Subjects:
化学表征
应用
掺杂
热稳定性
相变存储器
结晶温度
随机存取存储器
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Summary:Tile phase change material of Ge-doped Sb2 Te3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb2Te3. Ge0.11Sb2Te3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge2Sb2 Tes. In addition, Ge0.11Sb2 Te3 presents extremely rapid reverse switching speed （lOns）, and up to 105 programming cycles are obtained with stable set and reset resistances.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/7/077302