Fabrication and characterization of novel high-speed In GaAs/InP uni-traveling-carrier photodetector for high responsivity

A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The re...

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Published in:中国物理B：英文版 2015 (10), p.612-616
Main Author: 陈庆涛 黄永清 费嘉瑞 段晓峰 刘凯 刘锋 康超 汪君楚 房文敬 任晓敏
Format: Article
Language:English
Subjects:
光电探测器
制备
响应度
外部量子效率
砷化镓
磷化铟
表征
载流子
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Summary:A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W（the external quantum efficiency of 86%） is obtained at 1550 nm with a 40-μm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 n A and the 3-d B bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of3 V.
ISSN:1674-1056
2058-3834