Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si （001） substrates

Semi-polar （1 - 101 ） InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si （100） substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting { 111 } planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, cover...

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Bibliographic Details
Published in:中国物理B：英文版 2015 (11), p.530-533
Main Author: 陈龙 裴嘉鼎 史达特 李成 张建明 俞文杰 狄增峰 王曦
Format: Article
Language:English
Subjects:
InGaN/GaN
Si（001）衬底
制备
半极性
发光二极管
多量子阱
微结构
气相外延生长
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Summary:Semi-polar （1 - 101 ） InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si （100） substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting { 111 } planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared （1-101） GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.
ISSN:1674-1056
2058-3834