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High-performance rigid and flexible ultraviolet photo- detectors with single-crystalline ZnGa2O4 nanowires

ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral resp...

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Bibliographic Details
Published in:纳米研究:英文版 2015 (7), p.2162-2169
Main Author: Zheng Lou Ludong Li Guozhen Shen
Format: Article
Language:English
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Summary:ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 - 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.
ISSN:1998-0124
1998-0000