Impact of Cu-rich growth on the CueZnSnSe4 surface morphology and related solar cells behavior

Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 （CZTSe）thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volat...

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Bibliographic Details
Published in:半导体学报：英文版 2016 (1), p.24-28
Main Author: Sun Ding Ge Yang Zhang Li Xu Shengzhi Chen Ze Wang Ning Liang Xuejiao Wei Changchun Zhao Ying Zhang Xiaodan
Format: Article
Language:English
Subjects:
CIGS
影响曲线
电池性能
蒸发工艺
薄膜太阳能电池
表面形貌
衬底温度
铜
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Summary:Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 （CZTSe）thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.
ISSN:1674-4926