Structural Design and Experiment of Narrow-Band Response GaA1As Photocathodes

To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathod...

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Published in:中国物理快报：英文版 2016 (2), p.125-128
Main Author: 赵静 张健 覃翠 余辉龙 张益军 陈鑫龙 常本康
Format: Article
Language:English
Subjects:
传输模式
光电阴极
实验
峰值响应
窄带
结构设计
量子效率
金属有机化学气相沉积
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Summary:To obtain the peak response at 532nm, narrow-band response GaA1As photocathodes with two GaAIAs ac- tive layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532nm for the two kinds of photocathodes respectively. The response of the reflection-mode photoeath- ode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAIAs active layer can improve the transmission-mode response.
ISSN:0256-307X
1741-3540