Improved Semipolar （1132） GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiNx Interlayer

• Published in: 中国物理快报：英文版 2016 (6), p.150-152
• Main Author: 许晟瑞 赵颖 姜腾 张进成 李培咸 郝跃
• Format: Article
• Language: English
• Subjects: GaN; SiNx; 化学气相沉积; 半极性; 有机金属; 自组织生长; 蓝宝石衬底; 质量
• ISSN: 0256-307X; 1741-3540

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.