Effects of p-type Ga N thickness on optical properties of Ga N-based light-emitting diodes

The influence of p-type Ga N（p Ga N） thickness on the light output power（LOP） and internal quantum efficiency（IQE） of light emitting diode（LED） was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then d...

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Bibliographic Details
Published in:光电子快报：英文版 2016 (4), p.249-252
Main Author: 徐明升 张恒 周泉斌 王洪
Format: Article
Language:English
Subjects:
LED
光学性质
光输出功率
厚度
发光二极管
载流子浓度
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Summary:The influence of p-type Ga N（p Ga N） thickness on the light output power（LOP） and internal quantum efficiency（IQE） of light emitting diode（LED） was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.
ISSN:1673-1905
1993-5013