Effect of annealing temperature of Bi1.5Zn1.0Nb1.507 gate insulator on performance of ZnO based thin film transistors

The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance...

Full description

Saved in:
Bibliographic Details
Published in:半导体学报：英文版 2016 (7), p.76-81
Main Author: 叶伟 任巍 史鹏 蒋庄德
Format: Article
Language:English
Subjects:
ZnO
射频磁控溅射
栅极
漏电流密度
电学性能
绝缘体
薄膜晶体管
退火温度
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.
ISSN:1674-4926