Rapidly counting atomic planes of ultra-thin MoSe2 nanosheets （1 ≤ n ≤ 4） on SiO2/Si substrate

The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based...

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Bibliographic Details
Published in:稀有金属：英文版 2016 (8), p.632-636
Main Author: Yi-Ping Wang Hui-Jun Zhou Gui-Hua Zhao Tian-Long Xia Lei Wang Le Wang Li-Yuan Zhang
Format: Article
Language:English
Subjects:
SiO2
Si衬底
原子
快速计数
纳米
超薄
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Summary:The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.
ISSN:1001-0521
1867-7185