Thickness properties hexagonal and temperature dependent electrical of ZrS2 thin films directly grown on boron nitride

Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexag...

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Bibliographic Details
Published in:纳米研究：英文版 2016 (10), p.2931-2937
Main Author: Yiming Zhu Xinsheng Wang Mei Zhang Congzhong Cai Liming Xie
Format: Article
Language:English
Subjects:
六方氮化硼
六角形
厚度
温度相关
电气性能
直接生长
薄膜
金属-绝缘体转变
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Summary:Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.
ISSN:1998-0124
1998-0000