Segregation growth of epitaxial graphene overlayers on Ni（111）

The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surfac...

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Bibliographic Details
Published in:科学通报：英文版 2016 (19), p.1536-1542
Main Author: Yang Yang Qiang Fu Wei Wei Xinhe Bao
Format: Article
Language:English
Subjects:
定向控制
成核动力学
直接生长
石墨
表面偏析
覆盖层
金属表面
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Summary:The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surface imaging techniques. Epitaxial graphene islands nucleate and grow via segregation of dissolved carbon atoms to the top surface at about 400 ℃. This is in contrast to a mixture of epitaxial and non-epi- taxial graphene domains grown directly on Ni（111） at 540 ℃. The different growth behaviors are related to the nucleation dynamics which is controlled by local carbon densities in the near surface region.
ISSN:2095-9273