Segregation growth of epitaxial graphene overlayers on Ni（111）

The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surfac...

Full description

Saved in:
Bibliographic Details
Published in:科学通报：英文版 2016 (19), p.1536-1542
Main Author: Yang Yang Qiang Fu Wei Wei Xinhe Bao
Format: Article
Language:English
Subjects:
定向控制
成核动力学
直接生长
石墨
表面偏析
覆盖层
金属表面
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 1542
container_issue 19
container_start_page 1536
container_title 科学通报：英文版
container_volume
creator Yang Yang Qiang Fu Wei Wei Xinhe Bao
description The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surface imaging techniques. Epitaxial graphene islands nucleate and grow via segregation of dissolved carbon atoms to the top surface at about 400 ℃. This is in contrast to a mixture of epitaxial and non-epi- taxial graphene domains grown directly on Ni（111） at 540 ℃. The different growth behaviors are related to the nucleation dynamics which is controlled by local carbon densities in the near surface region.
format article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_670355735</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>670355735</cqvip_id><sourcerecordid>670355735</sourcerecordid><originalsourceid>FETCH-chongqing_primary_6703557353</originalsourceid><addsrcrecordid>eNpjYeA0MrA01bU0MjfmYOAtLs4yMDAwNLE0MjEw52RwCk5NL0pNTyzJzM9TSC_KLy_JUMhPU0gtyCxJrMhMzAGKJRZkpOalKuSXpRblJFamFhUrAJX6Zb7f02FoaPh-TycPA2taYk5xKi-U5mZQcnMNcfbQTc7Iz0svzMxLjy8oysxNLKqMNzM3MDY1NTc2NSZKEQAUqjsR</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Segregation growth of epitaxial graphene overlayers on Ni（111）</title><source>ScienceDirect Journals</source><source>Alma/SFX Local Collection</source><creator>Yang Yang Qiang Fu Wei Wei Xinhe Bao</creator><creatorcontrib>Yang Yang Qiang Fu Wei Wei Xinhe Bao</creatorcontrib><description>The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surface imaging techniques. Epitaxial graphene islands nucleate and grow via segregation of dissolved carbon atoms to the top surface at about 400 ℃. This is in contrast to a mixture of epitaxial and non-epi- taxial graphene domains grown directly on Ni（111） at 540 ℃. The different growth behaviors are related to the nucleation dynamics which is controlled by local carbon densities in the near surface region.</description><identifier>ISSN: 2095-9273</identifier><language>eng</language><subject>定向控制 ; 成核动力学 ; 直接生长 ; 石墨 ; 表面偏析 ; 覆盖层 ; 金属表面</subject><ispartof>科学通报：英文版, 2016 (19), p.1536-1542</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86894X/86894X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>Yang Yang Qiang Fu Wei Wei Xinhe Bao</creatorcontrib><title>Segregation growth of epitaxial graphene overlayers on Ni（111）</title><title>科学通报：英文版</title><addtitle>Chinese Science Bulletin</addtitle><description>The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surface imaging techniques. Epitaxial graphene islands nucleate and grow via segregation of dissolved carbon atoms to the top surface at about 400 ℃. This is in contrast to a mixture of epitaxial and non-epi- taxial graphene domains grown directly on Ni（111） at 540 ℃. The different growth behaviors are related to the nucleation dynamics which is controlled by local carbon densities in the near surface region.</description><subject>定向控制</subject><subject>成核动力学</subject><subject>直接生长</subject><subject>石墨</subject><subject>表面偏析</subject><subject>覆盖层</subject><subject>金属表面</subject><issn>2095-9273</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpjYeA0MrA01bU0MjfmYOAtLs4yMDAwNLE0MjEw52RwCk5NL0pNTyzJzM9TSC_KLy_JUMhPU0gtyCxJrMhMzAGKJRZkpOalKuSXpRblJFamFhUrAJX6Zb7f02FoaPh-TycPA2taYk5xKi-U5mZQcnMNcfbQTc7Iz0svzMxLjy8oysxNLKqMNzM3MDY1NTc2NSZKEQAUqjsR</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Yang Yang Qiang Fu Wei Wei Xinhe Bao</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2016</creationdate><title>Segregation growth of epitaxial graphene overlayers on Ni（111）</title><author>Yang Yang Qiang Fu Wei Wei Xinhe Bao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6703557353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>定向控制</topic><topic>成核动力学</topic><topic>直接生长</topic><topic>石墨</topic><topic>表面偏析</topic><topic>覆盖层</topic><topic>金属表面</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang Yang Qiang Fu Wei Wei Xinhe Bao</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>科学通报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang Yang Qiang Fu Wei Wei Xinhe Bao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Segregation growth of epitaxial graphene overlayers on Ni（111）</atitle><jtitle>科学通报：英文版</jtitle><addtitle>Chinese Science Bulletin</addtitle><date>2016</date><risdate>2016</risdate><issue>19</issue><spage>1536</spage><epage>1542</epage><pages>1536-1542</pages><issn>2095-9273</issn><abstract>The orientation control of graphene overlayers on metal surface is an important issue which remains as a challenge in graphene growth on Ni surface. Here we have demonstrated that epitaxial graphene overlayers can be obtained by annealing a nickel carbide covered Ni（111） surface using in situ surface imaging techniques. Epitaxial graphene islands nucleate and grow via segregation of dissolved carbon atoms to the top surface at about 400 ℃. This is in contrast to a mixture of epitaxial and non-epi- taxial graphene domains grown directly on Ni（111） at 540 ℃. The different growth behaviors are related to the nucleation dynamics which is controlled by local carbon densities in the near surface region.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 2095-9273
ispartof 科学通报：英文版, 2016 (19), p.1536-1542
issn 2095-9273
language eng
recordid cdi_chongqing_primary_670355735
source ScienceDirect Journals; Alma/SFX Local Collection
subjects 定向控制
成核动力学
直接生长
石墨
表面偏析
覆盖层
金属表面
title Segregation growth of epitaxial graphene overlayers on Ni（111）
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T23%3A36%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Segregation%20growth%20of%20epitaxial%20graphene%20overlayers%20on%20Ni%EF%BC%88111%EF%BC%89&rft.jtitle=%E7%A7%91%E5%AD%A6%E9%80%9A%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=Yang%20Yang%20Qiang%20Fu%20Wei%20Wei%20Xinhe%20Bao&rft.date=2016&rft.issue=19&rft.spage=1536&rft.epage=1542&rft.pages=1536-1542&rft.issn=2095-9273&rft_id=info:doi/&rft_dat=%3Cchongqing%3E670355735%3C/chongqing%3E%3Cgrp_id%3Ecdi_FETCH-chongqing_primary_6703557353%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=670355735&rfr_iscdi=true