High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-κ/Metal Gates

Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to impro...

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Bibliographic Details
Published in:中国物理快报：英文版 2016-11, Vol.33 (11), p.127-130
Main Author: 毛淑娟 朱正勇 王桂磊 朱慧珑 李俊峰 赵超
Format: Article
Language:English
Online Access:Get full text
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Summary:Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors （pMOSFETs） using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current （~428μA/μm at VDD = 1 V） and suppressed short-channel effects （DIBL~77mV/V and SS~90mV/decade）. It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/11/118502