Analysis of the modulation mechanisms of the electric field and breakdown performance in AIGaN/GaN HEMT with a T-shaped field-plate

A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical i...

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Bibliographic Details
Published in:中国物理B：英文版 2016, Vol.25 (12), p.430-434
Main Author: 毛维 范举胜 杜鸣 张金风 郑雪峰 王冲 马晓华 张进成 郝跃
Format: Article
Language:English
Subjects:
AlGaN/GaN
HEMT
击穿电压
场板
性能分析
机制
电场分布
高电子迁移率晶体管
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Summary:A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.
ISSN:1674-1056
2058-3834