On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that t...

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Bibliographic Details
Published in:Chinese physics B 2017-02, Vol.26 (2), p.403-405
Main Author: 雷勇 苏静 吴红艳 杨翠红 饶伟锋
Format: Article
Language:English
Subjects:
dislocations
homoepitaxial GaN
ideality factor
leakage current
Schottky contact
tunneling
偏压
偏置电压
反向漏电流
氮化镓
温度依赖性
电流模型
肖特基二极管
肖特基接触
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Summary:In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/2/027105