Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells

Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.pa...

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Bibliographic Details
Published in:能源前沿：英文版 2017, Vol.11 (1), p.92-95
Main Author: Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU
Format: Article
Language:English
Subjects:
单晶硅
发射器
太阳能电池
异质结太阳电池
掺杂浓度
短路电流
薄膜分析
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Summary:Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.
ISSN:2095-1701
2095-1698