Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells

Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.pa...

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Published in:能源前沿：英文版 2017, Vol.11 (1), p.92-95
Main Author: Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU
Format: Article
Language:English
Subjects:
单晶硅
发射器
太阳能电池
异质结太阳电池
掺杂浓度
短路电流
薄膜分析
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description Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_671410919</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>671410919</cqvip_id><sourcerecordid>671410919</sourcerecordid><originalsourceid>FETCH-chongqing_primary_6714109193</originalsourceid><addsrcrecordid>eNqNjE8OATEYxRshIbjDF_uJFmPMUoTYs5eqr6aTamkrMjvncAt7Z3AVV1AJe6v3J7_3aqQ1oHmasHE-qf98RlmTdL0vKaWM0ZRmgxa5Tg3XlVcerIRQIOzseasx0bxCBzxZqdfjtgQ8qBBicVGhgJ2SEh2aEOGjMnsQ1ogYHQ_KGg_SOnjev9O-iAYKjGtbno34IOCt5g4Eau07pCG59tj9apv0FvP1bJmIwpr9Kd5vjk4duKs244yNGM1ZPvwLegP2IVTP</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells</title><source>ABI/INFORM global</source><source>Springer Nature</source><creator>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</creator><creatorcontrib>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</creatorcontrib><description>Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.</description><identifier>ISSN: 2095-1701</identifier><identifier>EISSN: 2095-1698</identifier><language>eng</language><subject>单晶硅 ; 发射器 ; 太阳能电池 ; 异质结太阳电池 ; 掺杂浓度 ; 短路电流 ; 薄膜分析</subject><ispartof>能源前沿：英文版, 2017, Vol.11 (1), p.92-95</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/71239X/71239X.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</creatorcontrib><title>Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells</title><title>能源前沿：英文版</title><addtitle>Frontiers in Energy</addtitle><description>Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.</description><subject>单晶硅</subject><subject>发射器</subject><subject>太阳能电池</subject><subject>异质结太阳电池</subject><subject>掺杂浓度</subject><subject>短路电流</subject><subject>薄膜分析</subject><issn>2095-1701</issn><issn>2095-1698</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqNjE8OATEYxRshIbjDF_uJFmPMUoTYs5eqr6aTamkrMjvncAt7Z3AVV1AJe6v3J7_3aqQ1oHmasHE-qf98RlmTdL0vKaWM0ZRmgxa5Tg3XlVcerIRQIOzseasx0bxCBzxZqdfjtgQ8qBBicVGhgJ2SEh2aEOGjMnsQ1ogYHQ_KGg_SOnjev9O-iAYKjGtbno34IOCt5g4Eau07pCG59tj9apv0FvP1bJmIwpr9Kd5vjk4duKs244yNGM1ZPvwLegP2IVTP</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>2017</creationdate><title>Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells</title><author>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_6714109193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>单晶硅</topic><topic>发射器</topic><topic>太阳能电池</topic><topic>异质结太阳电池</topic><topic>掺杂浓度</topic><topic>短路电流</topic><topic>薄膜分析</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>能源前沿：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Haibin HUANG Gangyu TIAN Tao WANG Chao GAO Jiren YUAN Zhihao YUE Lang ZHOU</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells</atitle><jtitle>能源前沿：英文版</jtitle><addtitle>Frontiers in Energy</addtitle><date>2017</date><risdate>2017</risdate><volume>11</volume><issue>1</issue><spage>92</spage><epage>95</epage><pages>92-95</pages><issn>2095-1701</issn><eissn>2095-1698</eissn><abstract>Double-layer emitters with different doping concentrations （DLE） have been designed and prepared for amorphous silicon/crystalline silicon （ct-Si：H/c-Si） hetero- junction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation （AFORS-HET, http：//www.paper.edu.cn/html/releasepaper/2014/04/282/） prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency （QE） results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.</abstract></addata></record>
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subjects 单晶硅
发射器
太阳能电池
异质结太阳电池
掺杂浓度
短路电流
薄膜分析
title Analysis of the double-layer a-Si：H emitter with different doping concentrations for α-Si：H/c-Si heterojunction solar cells
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T06%3A13%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20the%20double-layer%20a-Si%EF%BC%9AH%20emitter%20with%20different%20doping%20concentrations%20for%20%CE%B1-Si%EF%BC%9AH/c-Si%20heterojunction%20solar%20cells&rft.jtitle=%E8%83%BD%E6%BA%90%E5%89%8D%E6%B2%BF%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=Haibin%20HUANG%20Gangyu%20TIAN%20Tao%20WANG%20Chao%20GAO%20Jiren%20YUAN%20Zhihao%20YUE%20Lang%20ZHOU&rft.date=2017&rft.volume=11&rft.issue=1&rft.spage=92&rft.epage=95&rft.pages=92-95&rft.issn=2095-1701&rft.eissn=2095-1698&rft_id=info:doi/&rft_dat=%3Cchongqing%3E671410919%3C/chongqing%3E%3Cgrp_id%3Ecdi_FETCH-chongqing_primary_6714109193%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=671410919&rfr_iscdi=true