Memristive Behavior Based on Ba-Doped SrTiO3 Films

The Sr0.95Ba0.05 TiO3 （SBT） nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The...

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Bibliographic Details
Published in:中国物理快报：英文版 2017-03, Vol.34 (3), p.126-129
Main Author: 窦刚 于洋 郭梅 张玉曼 孙钊 李玉霞
Format: Article
Language:English
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Summary:The Sr0.95Ba0.05 TiO3 （SBT） nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model M（q） = 12.3656 - 267.4038｜q（t）｜is calculated, where M（q） denotes the memristance depending on the quantity of electric charge, and q（t） denotes the quantity of electric charge depending on the time. The theoretical I-V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I-V characteristics are consistent with the measured I-V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/3/038502