Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment

SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect,...

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Bibliographic Details
Published in:半导体学报：英文版 2017-11, Vol.38 (11), p.60-65
Main Authors: Xiaoyu Chen, Youwen Zhao, Zhiyuan Dong, Guiying Shen, Yongbiao Bai, Jingming Liu, Hui Xie, Jiangbian He
Format: Article
Language:English
Subjects:
单晶硅太阳电池
吸杂
扩散处理
晶体硅太阳能电池
氧化硅层
氮化硅薄膜
绩效
钝化效果
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Summary:SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect, SiNx/SiOx layer has lower reflectivity in long wavelength range than conventional SiNx film. As a consequence, such solar cells exhibit higher conversion efficiency and better internal quantum efficiency, compared with conventional c-Si solar cells.
ISSN:1674-4926
DOI:10.1088/1674-4926/38/11/114004