Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing

Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the anne...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2017-12, Vol.26 (12), p.439-443
Main Authors: 汪煜, 杨濛, 王刚, 魏晓旭, 王军转, 李昀, 左则文, 郑有炓, 施毅
Format: Article
Language:English
Subjects:
annealing
desorption
segregation
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/12/126801