Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Total ionizing dose responses of different transistor geometries after being irradiated by ~（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSF...

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Bibliographic Details
Published in:中国物理B：英文版 2018-02, Vol.27 (2), p.619-624
Main Authors: 张梦映, 胡志远, 毕大炜, 戴丽华, 张正选
Format: Article
Language:English
Subjects:
放射
隧道
狭窄
金属氧化物半导体
nMOSFET
浅沟
阀值电压
TCAD
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Summary:Total ionizing dose responses of different transistor geometries after being irradiated by ~（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/27/2/028501