Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping m...

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Bibliographic Details
Published in:电子学报：英文版 2017 (5), p.952-959
Main Author: WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin
Format: Article
Language:English
Online Access:Get full text
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Summary:A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.
ISSN:1022-4653