Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping m...

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Published in:电子学报：英文版 2017 (5), p.952-959
Main Author: WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin
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description A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.
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fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_69689088504849554853484948</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>69689088504849554853484948</cqvip_id><sourcerecordid>69689088504849554853484948</sourcerecordid><originalsourceid>FETCH-chongqing_primary_696890885048495548534849483</originalsourceid><addsrcrecordid>eNqdjEtuwjAURT2gUlHLHt4GLAL-1BkiSqFS00HJHD2cR2LJsVM7DNg9QeoKOji6Z3LPjM1XxXrNpVbimS1ydudCrYR-U1rM2XC06PHsCaqrHx3vMPUxOAtfmFriR9cG9FDFhjxcYoKN3-P3cgIOu6rO8BmsvzYutICwp9jTmG78nQYKDYUR6o5SPwV-KLs8YrD0yp4u6DMt_vaFiY9dvT1w28XQ_k6l05Bcj-l20qU2ZWGMKqSRpVLSKPEwacT_XndsNVAf</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance</title><source>IEEE Xplore All Journals</source><source>IET Digital Library</source><creator>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</creator><creatorcontrib>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</creatorcontrib><description>A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.</description><identifier>ISSN: 1022-4653</identifier><language>eng</language><ispartof>电子学报：英文版, 2017 (5), p.952-959</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/86774X/86774X.jpg</thumbnail><link.rule.ids>314,780,784,4021</link.rule.ids></links><search><creatorcontrib>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</creatorcontrib><title>Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance</title><title>电子学报：英文版</title><addtitle>Chinese Journal of Electronics</addtitle><description>A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.</description><issn>1022-4653</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdjEtuwjAURT2gUlHLHt4GLAL-1BkiSqFS00HJHD2cR2LJsVM7DNg9QeoKOji6Z3LPjM1XxXrNpVbimS1ydudCrYR-U1rM2XC06PHsCaqrHx3vMPUxOAtfmFriR9cG9FDFhjxcYoKN3-P3cgIOu6rO8BmsvzYutICwp9jTmG78nQYKDYUR6o5SPwV-KLs8YrD0yp4u6DMt_vaFiY9dvT1w28XQ_k6l05Bcj-l20qU2ZWGMKqSRpVLSKPEwacT_XndsNVAf</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2017</creationdate><title>Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance</title><author>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_696890885048495548534849483</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>电子学报：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance</atitle><jtitle>电子学报：英文版</jtitle><addtitle>Chinese Journal of Electronics</addtitle><date>2017</date><risdate>2017</risdate><issue>5</issue><spage>952</spage><epage>959</epage><pages>952-959</pages><issn>1022-4653</issn><abstract>A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.</abstract></addata></record>
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title Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T07%3A33%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Scalable%20Multi-harmonic%20Large-Signal%20Model%20for%20AlGaN/GaN%20HEMTs%20Including%20a%20Geometry-Dependent%20Thermal%20Resistance&rft.jtitle=%E7%94%B5%E5%AD%90%E5%AD%A6%E6%8A%A5%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=WANG%20Changsi%20XU%20Yuehang%20WEN%20Zhang%20CHEN%20Zhikai%20XU%20Ruimin&rft.date=2017&rft.issue=5&rft.spage=952&rft.epage=959&rft.pages=952-959&rft.issn=1022-4653&rft_id=info:doi/&rft_dat=%3Cchongqing%3E69689088504849554853484948%3C/chongqing%3E%3Cgrp_id%3Ecdi_FETCH-chongqing_primary_696890885048495548534849483%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=69689088504849554853484948&rfr_iscdi=true