Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

• Published in: 中国物理快报：英文版 2017 (11), p.123-126
• Main Author: 张乐情 卢健 胥佳灵 刘小年 戴丽华 徐依然 毕大炜 张正选
• Format: Article
• Language: English
• ISSN: 0256-307X; 1741-3540

A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator(SOI) technologies. The effectiveness of linear energy transfer(LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles θ=0°,30°and 60°with respect to the normal direction are performed under heav.y-ion Kr with certain power whose LET is about 40 MeVcm~2/mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ, furthermore the effective LET for SOI is more closely in inverse proportion to cos θ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cos 0 very well, which is also specifically explained.