Binding energy of the donor impurities in GaAs-Ga1-xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields

The behavior of a donor in the GaAs–Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their...

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Bibliographic Details
Published in:中国物理B：英文版 2016-10 (10), p.39-44
Main Author: Esra Aciksoz Orhan Bayrak Asim Soylu
Format: Article
Language:English
Online Access:Get full text
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Summary:The behavior of a donor in the GaAs–Ga1-xAlxAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters（De, re, and a） as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/10/100302