Effects of Si surficial structure on transport properties of La2/3Sr1/3MnO3 films

La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field ar...

Full description

Saved in:
Bibliographic Details
Published in:中国物理B：英文版 2016-10 (10), p.287-292
Main Author: 顾晓敏 王伟 周国泰 高凯歌 蔡宏灵 张凤鸣 吴小山
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:La2/3Sr1/3MnO3 films are deposited on（001） silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger（14.3% for acid-etched,and 42.9% for alkali-etched） than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/10/106701