Charge State Control over Point Defects in Sic Devices

Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters that can be formed in SiC, and the potential for emission over a wide spectral...

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Bibliographic Details
Published in:Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2023-05, Vol.425, p.35-42
Main Authors: Enga, Marius Johan, Grossner, Ulrike, Kjeldby, Snorre B., Bathen, Marianne Etzelmüller, Müting, Johanna, Vines, Lasse, Selnesaunet, Gard M.
Format: Article
Language:English
Subjects:
Charge materials
Color centers
Emission
Emitters
Point defects
Silicon carbide
Spectral emittance
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Summary:Point defects in silicon carbide (SiC) are well positioned for integration with SiC based quantum photonic devices due to the maturity of SiC material and fabrication technology, the plethora of candidate quantum emitters that can be formed in SiC, and the potential for emission over a wide spectral range from the visible to the infrared. However, for each of the available color centers in SiC, only one of the charge states has displayed quantum emission, meaning that the emission strongly depends on the Fermi level and hence the doping concentration in the material. In this contribution, we discuss the methodology and mechanism for electrical charge-state control over point defects in SiC devices.
ISSN:1012-0386
1662-9507
1662-9507
DOI:10.4028/p-6ho92o