Vacancy defect and defect cluster energetics in ion-implanted ZnO

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shif...

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Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2010-02, Vol.81 (8), Article 081201
Main Authors: Dong, Yufeng, Tuomisto, F., Svensson, B. G., Kuznetsov, A. Yu, Brillson, Leonard J.
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description We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation. © 2010 American Physical Society
doi_str_mv 10.1103/PhysRevB.81.081201
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title Vacancy defect and defect cluster energetics in ion-implanted ZnO
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