A Simplified Method for Patterning Graphene on Dielectric Layers

The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures fo...

Full description

Saved in:
Bibliographic Details
Main Authors: Røst, Håkon Ivarssønn, Reed, Benjamen P, Strand, Frode Sneve, Durk, Joseph A, Evans, D. Andrew, Grubišić-Čabo, Antonija, Wan, Gary, Cattelan, Mattia, Prieto, Mauricio J, Gottlob, Daniel M, Tǎnase, Liviu C, De Souza Caldas, Lucas, Schmidt, Thomas, Tadich, Anton, Cowie, Bruce C. C, Chellappan, Rajesh Kumar, Wells, Justin William, Cooil, Simon P
Format: Article
Language:English
Subjects:
Grafen
Graphene
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.