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High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

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Bibliographic Details
Published in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2009-08, Vol.39 (8), p.723-726, Article 723
Main Authors:	Davydova, Evgeniya I, Zverkov, M V, Konyaev, V P, Krichevskii, V V, Ladugin, M A, Marmalyuk, Aleksandr A, Padalitsa, A A, Simakov, V A, Sukharev, A V, Uspenskii, Mikhail B
Format:	Article
Language:	English
Citations:	Items that cite this one
Online Access:	Get full text
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