Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in...

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Bibliographic Details
Published in:Chinese physics letters 2011-10, Vol.28 (10), p.108101-1-108101-4, Article 108101
Main Authors: Xia, Xiao-Chuan (晓川 夏), Wang, Hui (辉王), Zhao, Yang (洋赵), Wang, Jin (瑾王), Zhao, Jian-Ze (涧泽 赵), Shi, Zhi-Feng (志锋 史), Li, Xiang-Ping (香萍 李), Liang, Hong-Wei (宏伟 梁), Zhang, Bao-Lin (宝林 张), Du, Guo-Tong (国同 杜)
Format: Article
Language:English
Subjects:
Arsenic
Devices
Doping
Electroluminescence
Gallium arsenide
Gallium arsenides
Interlayers
X-rays
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Summary:Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 x 10 super(17) cm super(-3). The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p-n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/10/108101