Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers

Single and dual layers of InGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3 x 10 super(9)cm super(-2), 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a...

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Bibliographic Details
Published in:Chinese physics letters 2011-12, Vol.28 (12), p.128101-1-128101-3, Article 128101
Main Authors: Lv, Wen-Bin (文彬吕), Wang, Lai (莱汪), Wang, Jia-Xing (嘉星王), Hao, Zhi-Biao (智彪郝), Luo, Yi (毅罗)
Format: Article
Language:English
Subjects:
Barriers
Density
Gallium nitrides
Indium gallium nitrides
Metal organic chemical vapor deposition
Quantum dots
Strain
Three dimensional
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Summary:Single and dual layers of InGaN quantum dots (QDs) are grown by metal organic chemical vapor deposition. In the former, the density, average height and diameter of QDs are 1.3 x 10 super(9)cm super(-2), 0.93 nm and 65.1 nm, respectively. The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers. The density, average height and diameter of QDs in the upper layer are 2.6 x 10 super(10) cm super(-2), 4.6 nm and 81.3 nm, respectively. Two reasons are proposed to explain the QD density increase in the upper layer. First, the strain accumulation in the upper layer is higher, leading to a stronger three-dimensional growth. Second, the GaN barrier beneath the upper layer is so rough it induces growth QDs
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/12/128101