Impact ionization of free and bound excitons in AlGaAs/GaAs quantum wells

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Bibliographic Details
Published in:Semiconductor science and technology 1992-03, Vol.7 (3B), p.B517-B519, Article B517
Main Authors: Weman, H, Treacy, G M, Hjalmarson, H P, Law, K K, Bergman, J P, Merz, J L, Gossard, A C
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/7/3B/135