High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers

We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulati...

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Bibliographic Details
Published in:IEEE photonics technology letters 1994-06, Vol.6 (6), p.687-689
Main Authors: Siala, S., Hanmin Zhao, Govindarajan, M., Nottenburg, R.N., Dapkus, P.D.
Format: Article
Language:English
Subjects:
Anodes
Digital modulation
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
High speed optical techniques
Indium gallium arsenide
Lasers
Optical devices
Optical modulation
Optics
Physics
Power semiconductor switches
Semiconductor lasers
Semiconductor lasers
laser diodes
Temperature
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Summary:We present large-signal digital modulation of very low-threshold strained InGaAs/GaAs single quantum well (SQW) lasers with monolithically integrated intracavity modulators. The voltage controlled intracavity modulator was driven from a simple emitter-follower using a single NPN transistor. Modulation response mas obtained from dc to 1 Gbit/s with a modulation efficiency of 27% and modulation depth of nearly 100%. A bit-error-rate (BER) lower than 10/sup -11/ was measured at 1 Gbit/s with an input signal swing of only 110 mV. We demonstrate the suitability of these devices for ultrabroad-band optical interconnection applications.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.300163